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| BCW 60, BCX 70 NPN Silicon AF Transistors * For AF input stages and driver applications * High current gain * Low collector-emitter saturation voltage * Low noise between 30 Hz and 15 kHz * Complementary types: BCW 61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW 60A BCW 60B BCW 60C BCW 60D BCW 60FF BCW 60FN BCX 70G BCX 70H BCX 70J BCX 70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 1 Sep-30-1999 BCW 60, BCX 70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Peak base current Total power dissipation, TS = 71 C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IBM Ptot Tj Tstg BCW 60 32 32 5 BCW60FF BCX 70 Unit 32 32 5 100 200 200 330 150 -65 ... 150 mW C 45 45 5 V mA Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS 310 240 K/W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 1 A, IC = 0 BCW 60/60FF BCX 70 BCW 60/60FF BCX 70 Unit max. V typ. V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 - 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 2 Sep-30-1999 BCW 60, BCX 70 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 C BCW 60 / 60FF VCB = 45 V, IE = 0 , TA = 150 C BCX 70 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 10 A, VCE = 5 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN BCW 60 / 60FF BCX 70 Unit max. nA typ. ICBO ICBO IEBO hFE 20 20 40 100 hFE hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN - 20 20 A 20 20 20 nA - - 140 200 300 460 170 250 350 500 - 220 310 460 630 - DC current gain 1) IC = 2 mA, VCE = 5 V 120 180 250 380 hFE 50 70 90 100 DC current gain 1) IC = 50 mA, VCE = 1 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN 1) Pulse test: t 300s, D = 2% 3 Sep-30-1999 BCW 60, BCX 70 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC Characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage 1) IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-grp. A/G B/H C / J / FF D / K / FN Symbol min. VCEsat VBEsat VBE(ON) 0.55 - Values typ. max. Unit V 0.12 0.2 0.7 0.83 0.52 0.65 0.78 0.25 0.55 0.85 1.05 0.75 - fT Ccb Ceb h11e - 250 3 8 - MHz pF k 2.7 3.6 4.5 7.5 1.5 2 2 3 10-4 - Open-circuit reverse voltage transf.ratio | hFE-grp. h12e IC = 2 mA, VCE = 5 V, f = 1 kHz A/G B/H C / J/FF D / K / FN 1) Pulse test: t 300s, D = 2% 4 Sep-30-1999 BCW 60, BCX 70 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC Characteristics typ. max. Unit Short-circuit forward current transf.ratio | hFE-grp. h21e A/G IC = 2 mA, VCE = 5 V, f = 1 kHz B/H C / J/ FF D / K / FN 200 260 330 520 18 24 30 50 S dB 2 1 2 135 V Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-grp. A/G B/H C / J / FF D / K / FN h22e Noise figure IC = 100 A, VCE = 5 V, RS = 1 k, f = 1 kHz, f = 200 Hz Equivalent noise voltage IC = 200 A, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz hFE-grp. A-K FF - FN hFE-grp. FF / FN F Vn 5 Sep-30-1999 BCW 60, BCX 70 Total power dissipation Ptot = f (TA*;TS ) * Package mounted on epoxy BCW 60/BCX 70 EHP00326 Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BCW 60/BCX 70 EHP00327 400 Ptot mW 12 CCBO pF (C EBO) 10 300 8 CEBO TS 200 TA 4 CCBO 6 100 2 0 0 50 100 C TA ; TS 150 0 10 -1 10 0 V 10 1 V CBO (V EBO ) Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCW 60/BCX 70 EHP00328 Transition frequency fT = f (IC) VCE = 5V BCW 60/BCX 70 EHP00330 10 3 MHz fT D= tp T tp T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 -1 10 0 10 1 mA 10 2 C 6 Sep-30-1999 BCW 60, BCX 70 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 40 BCW 60/BCX 70 EHP00331 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 40 10 2 BCW 60/BCX 70 EHP00332 10 2 C mA 100 C 25 C -50 C C mA 100 C 25 C -50 C 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 0.2 0.4 0.6 0.8 V V BE sat 1.2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 V CEsat Collector current IC = f (VBE) VCE = 5V 10 2 BCW 60/BCX 70 EHP00333 DC current gain hFE = f (I C) VCE = 5V 10 3 h FE 5 BCW 60/BCX 70 EHP00334 C mA 100 C 25 C 10 1 5 10 2 5 -50 C 10 0 5 10 1 10 -1 5 100 C 25 C -50 C 5 10 -2 0 0.5 V V BE 1.0 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 C 7 Sep-30-1999 BCW 60, BCX 70 Collector cutoff current ICBO = f (TA) VCB = VCEmax 10 4 nA BCW 60/BCX 70 EHP00335 h parameter he = f (IC) normalized VCE = 5V 10 2 he 5 BCW 60/BCX 70 EHP00336 CBO 10 3 h 11e 10 2 max 10 5 1 VCE = 5 V h 12e 10 1 10 0 h 21e 10 0 typ 5 h 22e 10 -1 10 -1 10 -1 0 50 100 C TA 150 5 10 0 mA 10 1 C h parameter he = f (VCE ) normalized IC = 2mA BCW 60/BCX 70 EHP00337 Noise figure F = f (V CE) IC = 0.2mA, R S = 2k, f = 1kHz 20 F dB 15 BCW 60/BCX 70 EHP00338 2.0 he 1.5 C = 2 mA h 21e h 11e 1.0 h 12e h 22e 10 0.5 5 0 0 10 20 V VCE 30 0 10 -1 10 0 10 1 V VCE 10 2 8 Sep-30-1999 BCW 60, BCX 70 Noise figure F = f (f) IC = 0.2mA, VCE = 5V, RS = 2k 20 F dB 15 BCW 60/BCX 70 EHP00339 Noise figure F = f (IC) VCE = 5V, f = 120Hz 20 F dB 15 RS = 1 M 100 k 10 k BCW 60/BCX 70 EHP00340 10 10 500 5 5 1 k 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C Noise figure F = f (IC ) VCE = 5V, f = 1kHz 20 F dB 15 BCW 60/BCX 70 EHP00341 Noise figure F = f (IC) VCE = 5V, f = 10kHz 20 F dB 15 RS = 1 M 100 k BCW 60/BCX 70 EHP00342 R S = 1 M 100 k 10 k 10 1 k 10 500 10 k 5 500 5 1 k 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10 -3 10 -2 10 -1 10 0 mA 10 1 C C 9 Sep-30-1999 |
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